Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

Aditi Agarwal; Ajit Kanale; Ki Jeong Han; B. Jayant Baliga; Subhashish Bhattacharya

doi:10.4028/www.scientific.net/MSF.1004.789

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Experimental Study of Switching and Short-Circuit...

Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs

Abstract:

This paper compares the static and dynamic performance of 1.2 kV 4H-SiC ACCUFETs and INVFETs with identical channel length (0.5 μm) and gate oxide thickness (55 nm). It is demonstrated for the first time that ACCUFETs have lower total switching losses in comparison to the INVFETs. ACCUFETs are therefore superior devices for applications due to their lower specific on-resistance and overall switching losses. However, short circuit tests conducted on the devices show that ACCUFETs have a smaller short-circuit time (t_SC) in comparison the INVFETs due to their higher short-circuit current.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

789-794

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.789

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Online since:

July 2020

Authors:

Aditi Agarwal*, Ajit Kanale, Ki Jeong Han, B. Jayant Baliga, Subhashish Bhattacharya

Keywords:

ACCUFET, Double Pulse Test (DPT), High-Frequency Figure-of-Merit (HF-FOM), INVFET, Saturation Current, Short Circuit Test

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References

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