Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs

Enea Bianda; Andrei Mihaila; Gianpaolo Romano; Lars Knoll; Stephan Wirths; Daniele Torresin

doi:10.4028/www.scientific.net/MSF.1004.814

Paper Titles

Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs
p.789

Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
p.795

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD
p.801

Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET
p.808

Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs
p.814

Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs
p.822

Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process
p.830

Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs
p.837

Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors
p.843

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Investigation into the Body Diode Degradation of...

Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs

Abstract:

The aim of this study is to investigate the main contributing factors to the degradation of the intrinsic body diode in SiC MOSFETs, caused by the expansion of stacking faults (SFs) from the substrate into the epitaxial layer, and how it affects their performance. Additionally, a comparison between DC forward current stress and surge current pulse stress is shown.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

814-821

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.814

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Online since:

July 2020

Authors:

Enea Bianda*, Andrei Mihaila, Gianpaolo Romano, Lars Knoll, Stephan Wirths, Daniele Torresin

Keywords:

Body Diode, Degradation, High Voltage, SiC MOSFET, Stacking Faults, Surge

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