Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

Abstract:

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperatures dependence of critical avalanche energy are confirmed.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 837-842
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.837
• Online since: July 2020
• Authors: Xiao Chuan Deng, Hao Zhu, Xuan Li*, Xiao Jie Xu, Kun Zhou, Zhi Qiang Li, Song Bai, You Run Zhang, Bo Zhang
• Keywords: Asymmetric Trench MOSFET, Avalanche Endurance, Silicon Carbide

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