Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT

Koji Nakayama; Yoshitaka Sugawara; Yoichi Miyanagi; Katsunori Asano; Shuuji Ogata; Shinichi Okada; Toru Izumi; Atsushi Tanaka

doi:10.4028/www.scientific.net/MSF.600-603.1175

Paper Titles

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
p.1171

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
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12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
p.1191

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Behavior of Stacking Faults in TEDREC Phenomena...

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT

Abstract:

The behavior of stacking faults with regard to Vf degradations and TEDREC phenomena for 4.5 kV SiCGT have been investigated through the use of light emission images. Stacking faults, which cause Vf degradations, are expanded when current densities are increased. A novel phenomena of Vf degradation reduction, TEDREC phenomena, was found, which can reduce degradation by increasing operating temperature. It was observed for the first time that stacking faults become inactive by elevating temperatures to more than 150 oC in spite of existing stacking faults, which is a factor that contributes to TEDREC phenomena.