Paper Titles
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
p.1011
Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
p.1015
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
p.1019
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
p.1023
Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
p.1027
Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
p.1031
Fast Non-Contact Dielectric Characterization for SiC MOS Processing
p.1035
High Temperature Reliability of SiC n-MOS Devices up to 630 °C
p.1039
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
p.1043

Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces

Article Preview

Abstract:

The investigation of the silicon carbide surface after a sacrificial silicon oxidation technique is reported. Oxidation of SiC is a necessary step in the fabrication of MOS devices and device termination features such as field plates. Device processing requires the etching of windows through the oxide layer to form features such as metal / SiC contacts. However, this work indicates that a thin interfacial Si-O-C layer is still present after etching the oxide with hydrofluric acid (HF). Ellipsometry and X-ray photoelectron spectroscopy (XPS) have been used to evaluate this interfacial layer formed after oxide growth and after subsequent removal of oxide layers. An XPS analysis of the surface after removal of the oxide revealed that silicon, oxygen and carbon were all present in the remaining layer, which could not be removed by annealing at temperatures up to 1000°C. The Si-O-C layer could be eliminated by altering the oxidation conditions or by using a sacrificial silicon layer oxidation process. Ni Schottky barrier diodes fabricated on the 4H-SiC surface after removal of the oxide, displayed slightly higher ideality factors than those of diodes fabricated on untreated 4H-SiC samples.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1027-1030

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1027

Citation:

Cite this paper

Online since:

October 2006

Authors:

Owen James Guy, L. Chen, G. Pope, K.S. Teng, T. Maffeis, S.P. Wilks, Philip Andrew Mawby, T.E. Jenkins, A. Brieva, D.J. Hayton

Keywords:

Ellipsometry, Oxidation, Schottky, Surface, X-Ray Photoelectron Spectroscopy (XPS)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] R. Schörner, P. Friedrichs, and D. Perters: IEEE Trans. Electron Devices (USA), Vol. 46 (1999), p.533.

Google Scholar

[2] R. Schörner, P. Friedrichs, D. Perters, and D. Stephani: IEEE Electron Device Lett. (USA), Vol. 20 (1999), p.241.

Google Scholar

[3] N. S. Saks, S. S. Mani, and A. K. Agarwal: Mater. Sci. Forum (Switzerland) Vol. 353-356 (2001), p.1113; Appl. Phys. Lett. (USA), Vol. 76 (2000), p.2250.

Google Scholar

[4] C. -M. Zetterling: Process Technology for Silicon Carbide Devices. (Published by EMIS Processing Series 2. INSPEC ©2002) pp.93-108.

Google Scholar

[5] L. Chen, O.J. Guy, G. Pope, K.S. Teng, T. Maffeis, S. P. Wilks, P.A. Mawby, T. Jenkins, A. Brieva, and D.J. Hayton: Mat. Sci. Forum, Vol. 457-460 (2004), p.1337.

DOI: 10.4028/www.scientific.net/msf.457-460.1337

Google Scholar

[6] A.G. Bruggeman: Ann. Phys., Vol. 24 (1935), p.636.

Google Scholar

[7] http: /www. sopra-sa. com.

Google Scholar

[8] D.J. Hayton, T.E. Jenkins, P. Bailey, and T.C.Q. Noakes: Semicond . Sci. Technol, Vol. 19 (2002), p. L29.

Google Scholar

[9] D. Ziane, J.M. Bluet, G. Guillot, P. Godignon, J. Monserrat, R. Ciechonski, M. Syvajarvi, R. Yakimova, L. Chen, and P.A. Mawby: Mat. Sci. Forum, Vol. 457-460 (2004), p.1281.

DOI: 10.4028/www.scientific.net/msf.457-460.1281

Google Scholar