Paper Titles
Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
p.1405
Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
p.1409
First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
p.1413
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
p.1417
4H-SiC Bipolar Transistors with UHF and L-Band Operation
p.1421
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
p.1425
Optimization of the Specific On-Resistance of 4H-SiC BJTs
p.1429
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
p.1433
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
p.1437

4H-SiC Bipolar Transistors with UHF and L-Band Operation

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Abstract:

We report for the first time on RF SiC BJTs fabricated on semi-insulating (SI) substrates with L-band performance. Small-periphery (4x150μm) devices were tested using on-wafer load-pull measurements up to 1.5GHz. Under pulsed conditions, the devices exhibited 10dB of power gain at 1GHz and a peak power density of 2.3W/mm (1.4W) with a 100μs pulse width and a 1% duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W). The load-pull measurements were performed up to 125oC, which resulted in a 1 dB reduction of power gain compared to the room temperature performance. Results at 0.5 and 1.5 GHz are presented as well.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1421-1424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1421

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Online since:

October 2006

Authors:

Ivan Perez-Wurfl, Feng Zhao, Chih Fang Huang, John Torvik, Bart Van Zeghbroeck

Keywords:

Bipolar Junction Transistor (BJT), High Temperature RF Operation, L-Band, Load Pull, UHF

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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