Paper Titles
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
p.1433
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
p.1437
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
p.1441
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
p.1445
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
p.1449
Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
p.1453
SiC-Based MOSFETs for Harsh Environment Emissions Sensors
p.1457
Development of Ultra High Sensitivity UV Silicon Carbide Detectors
p.1461
Silicon Carbide Power Diodes as Radiation Detectors
p.1465

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

Article Preview

Abstract:

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1449-1452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1449

Citation:

Cite this paper

Online since:

October 2006

Authors:

Yang Sui, Ginger G. Walden, Xiao Kun Wang, James A. Cooper

Keywords:

Insulated Gate Bipolar Transistor (IGBT), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Thyristor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] MEDICI™ Two-Dimensional Device Simulation Program, Sunnyvale, CA (1997).

Google Scholar

[2] M. Matin, A. Saha, and J. A. Cooper, Jr.: IEEE Trans. Electron Devices, Vol. 51 (2004), p.1721.

Google Scholar

[3] J. B. Casady and R. W. Johnson: Solid-State Electronics, Vol. 39 (1996), p.1409.

Google Scholar

[4] M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Eds.: Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, and SiGe (John Wiley and Sons, New York 2001).

Google Scholar

[5] O. Kordina and J. P. Bergman: Appl. Phys. Lett., Vol. 69 (1996), p.679.

Google Scholar

[6] M. Ruff, H. Mitlehner, and R. Helbig: IEEE Tran. Electron Devices, Vol. 41 (1994), p.1040. Temperature n-MOSFET p-IGBT n-IGBT pnpn thyristor npnp thyristor.

Google Scholar

[27] °C 25 A/cm.

Google Scholar

[2] 41 A/cm.

Google Scholar

[2] 49 A/cm.

Google Scholar

[2] 73 A/cm.

Google Scholar

[2] 76 A/cm.

Google Scholar

[2] 225 °C 14 A/cm.

Google Scholar

[2] 44 A/cm.

Google Scholar

[2] 52 A/cm.

Google Scholar

[2] 78 A/cm.

Google Scholar

[2] 83 A/cm.

Google Scholar

[2] Table 2. On-state current density at a package power dissipation of 300 W/cm 2.

Google Scholar