Paper Titles
Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling
p.129
Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
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Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
p.153
SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
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Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
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Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor
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Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor
p.171

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

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Abstract:

4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by a low-pressure hot-wall type chemical vapor deposition system. The C-face substrates were prepared by fine mechanical polishing using diamond abrasives with the grit size of 0.25 %m and in-situ HCl etching at 1400°C, which produced surface roughness of 0.27 nm. The use of the smooth substrates made it possible to decrease the substrate temperature and specular surface morphologies were realized at C/Si ratios of 1.5 or less both for a substrate temperature of 1550°C and for that of 1500°C. Surface roughness of 0.26 nm and the residual donor concentration of 6.7×1014 cm-3 were obtained for a C-face epitaxial layer grown at a C/Si ratio of 1.5 and at a substrate temperature of 1550°C. Schottky barrier diodes were fabricated on a non-doped C-face epitaxial layer grown at 1500°C and it was verified that a high quality metal-semiconductor interface was formed on the epitaxial layer.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

153-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.153

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Online since:

October 2006

Authors:

Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, Hiroshi Tsuge, Masashi Nakabayashi, Taizo Hoshino, Noboru Ohtani

Keywords:

4H-SiC, Atomic Force Microscope (AFM), Carbon Face, Epitaxial Growth, Residual Donor Concentration, Surfacial Morphology

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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