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GaN Resistive Gas Sensors for Hydrogen Detection

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Abstract:

We report on the fabrication and testing of GaN resistive gas sensors for hydrogen detection. The Si-doped n-type GaN was grown by organometallic vapor phase epitaxy (OMVPE) on c-plane sapphire substrates. The device structure is simply a pair of metal ohmic contact pads. The sensors are sensitive to H2 gas over a wide range of concentration: the lowest concentration tested being ~0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of the signal is observed up to 100% H2 flow. In the continuous operation mode with varying H2 concentration, a clear and sharp response was recorded with no memory effects during ramping up and down cycles of H2 concentration. The change in current at a fixed voltage to hydrogen was found to change with sensor geometry. The possible gas sensing mechanisms are still under investigation.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1553-1556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1553

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Online since:

October 2006

Authors:

F. Yun, T.J. Fawcett, S. Chevtchenko, Y.T. Moon, Hadis Morkoç, J.T. Wolan

Keywords:

Gallium Nitride (GaN), Hydrogen, OMVPE, Sensor

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] A. Lloyd Spetz, A. Baranzahi, P. Tobias, and I. Lundstrom: Phys. Stat. Sol. 162 (1997), p.493.

Google Scholar

[2] B. P. Luther, S. D. Wolter, and S. E. Mohney: Sens. Actuators B 56 (1999), p.164.

Google Scholar

[3] J. Schalwig, G. Muller, L. Gorgens, and G. Dollinger: Appl. Phys. Lett. 80 (2002), p.1222.

Google Scholar

[4] J. Kim, F. Ren, B. P. Gila, C. R. Abernathy, and S. J. Pearton: Appl. Phys. Lett. 82 (2003), p.739.

Google Scholar

[5] J. Kim, B. P. Gila, C. R. Abernathy, G. Y. Chung, F. Ren, and S. J. Pearton: Solid-State Electron. 47 (2003), p.1487.

Google Scholar

[6] O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. Lloyd Spetz, M. Stutzmann, and M. Eickhoff: Appl. Phys. Lett. 83 (2003), p.773.

DOI: 10.1063/1.1593794

Google Scholar

[7] T. J. Fawcett, J. T. Wolan, R. L. Myers, J. Walker, and S. E. Saddow: Appl. Phys. Lett. 85 (2004), p.416.

Google Scholar

[8] See, for example, G. W. Hunter, P. G. Neudeck, G. D. Jefferson, and G. C. Madzar: Fourth Annual Space System Health Mangement Technical Conference, National Aeronautic and Space Administration, NASA Tech. Memo 106141; E. Souteyrand, D. Nicolas, and J. R. Martin: Sens. Actuators B 24 (1995).

Google Scholar

[9] T. Takada, K. Suzuki, and M. Nakane: Sens. Actuators B 13 (1993), p.404.

Google Scholar

[10] J. E. Northrup and J. Neugebauer: Appl. Phys. Lett. 85 (2004), p.3429.

Google Scholar

[11] C. G. Van de Walle and J. Neugebauer: Nature 4232 (2003), p.626.

Google Scholar