Paper Titles
Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
p.1549
GaN Resistive Gas Sensors for Hydrogen Detection
p.1553
Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
p.1559
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
p.1563
Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique
p.1567
The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices
p.1571
Role of Oxygen in Growth of Carbon Nanotubes on SiC
p.1575
Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition
p.1579
First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type Dislocation
p.1583

Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique

Article Preview

Abstract:

ZnO bulk crystal wafers, undoped and doped with various impurities of Ga, Er, Co, Ho, Fe, Mn, and co-doped Mg-Li, have been prepared by a modified melt growth method, and characterized by optical techniques of Raman scattering, photoluminescence and UV-visible transmission. Their wurtzite structures were confirmed, with a small degree of crystalline imperfection. It is shown that with some dopants, such as, Co and Fe, the electronic energy gap is affected much less than the optical absorption gap. Computer analysis has helped greatly in obtaining useful information of the optical properties of the ZnO bulk materials.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1567-1570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1567

Citation:

Cite this paper

Online since:

October 2006

Authors:

Zhe Chuan Feng, J.W. Yu, J.B. Wang, R. Varatharajan, B. Nemeth, J. Nause, Ian T. Ferguson, Wei Jie Lu, W.E. Collins

Keywords:

Bulk Growth, Optical Transmission, Photoluminescence (PL), Raman Scattering, Zinc Oxide (ZnO)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] T. Koid, S. F. Chichibu, A. Uedono, T. Sota, A. Tsukazaki and M. Kawasaki: Appl. Phys. Lett. 84 (2004), p.1079.

Google Scholar

[2] X. Li, B. Keyes, S. Asher, S.B. Zhang, S.H. Wei, T.J. Coutts, S. Limpijummong and C.G. Van de Walle: Appl. Phys. Lett. Vol. 86 (2004), p.122107.

DOI: 10.1063/1.1886256

Google Scholar

[3] C.X. Xu, X.W. Sun, C. Yuen, B.J. Chen, S.F. Yu and Z.L. Dong: Appl. Phys. Lett. Vol. 86 (2005), p.011118.

Google Scholar

[4] S. Kolesnik, B. Dabrowski and J. Mais: J. Appl. Phys. 95 (2004), p.2582.

Google Scholar

[5] Ya.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev and B.M. Ataev: Appl. Phys. Lett. Vol. 83 (2003), p.2943.

DOI: 10.1063/1.1615308

Google Scholar

[6] Z.Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X.L. Yuan and T. Sekiguchi: J. Appl. Phys. Vol. 94 (2003), p.4807.

Google Scholar

[7] C. Yuen, S.F. Yu, S.P. Lau, Rusli, and T.P. Chen: Appl. Phys. Lett. Vol. 86 (2005), p.241111.

Google Scholar

[8] C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E.M. Kaidashev, M. Lorenz and M. Grundmann: Appl. Phys. Lett. Vol. 83 (2003), p. (1974).

DOI: 10.1063/1.1609251

Google Scholar

[9] J. Ye, S. Gu, S. Zhu, T. Chen, W. Liu, F. Qin, L. Hu, R. Zhang, Y. Shi and Y. Zheng: J. Vac. Sci. Technol. A Vol. 21 (2003), p.979.

Google Scholar

[10] M.H. Kane, R. Varatharajan, Z.C. Feng, S. Kandoor, J. Nause, C. Summers, and I.T. Ferguson: MRS Symp. Proc. Vol. 799 (2004), p. Z8. 6.

DOI: 10.1557/proc-799-z8.6

Google Scholar

[11] S. Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner, and C. Summers: MRS Symp. Proc. Vol. 799 (2004), p. Z8. 10.

Google Scholar

[12] Z.C. Feng: Optical Engineering 41 (2002), p. (2022).

Google Scholar

[13] Z.C. Feng: in SiC Power Materials, Devices and Applications, ed. Zhe Chuan Feng, (Springer, Berlin, 2004), pp.209-276.

Google Scholar

[14] J.M. Calleja and M. Cardona: Phys. Rev. B Vol. 16 (1977), p.3753.

Google Scholar