Paper Titles
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources
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Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
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Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
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Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
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Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
p.219
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
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Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
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Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface
p.235

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

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Abstract:

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

219-222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.219

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Online since:

October 2006

Authors:

Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami

Keywords:

C Face, Homoepitaxy, Hot-Wall CVD

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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