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Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
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SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology
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CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
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Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
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6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
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Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
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CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates

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Abstract:

Hot-wall chemical vapor deposition has been used to epitaxially grow SiC layers on porous n-type 4H-SiC substrates. The growth was carried out at different speeds on porous layers of two different thicknesses. The quality of the SiC films was evaluated by X-ray diffraction and photoluminescence techniques. Based on the measurements, both the growth speed and the thickness of the porous layer buried underneath the epilayers do not appear to influence the structural integrity of the films. The intensity of the near bandedge low temperature photoluminescence appears stronger by a factor of two in films grown on porous layers.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.255

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Online since:

October 2006

Authors:

Y. Shishkin, Yue Ke, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Stephen E. Saddow

Keywords:

Growth Speed, Homoepitaxy, Hot-Wall CVD, Porous

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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