Paper Titles
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
p.255
Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
p.259
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
p.263
Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
p.267
Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature
p.271
Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
p.275
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
p.279
Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
p.283
Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
p.287

Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature

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Abstract:

The vapour-Liquid-Solid mechanism was used for growing epitaxial SiC layers on onaxis 6H-SiC and 4H-SiC substrates. By feeding Al70Si30 melts with propane, homoepitaxial growth was demonstrated down to 1100°C on both polytypes. At this temperature, the surface morphology is rough and non uniform with spiral growth forming large hillocks at the places where screw dislocations emerge from the substrate. Raman spectroscopy confirms the absence of the 3C-SiC polytype and shows the high Al doping of the layers. This growth temperature of 1100°C is the lowest one ever reported for growing homoepitaxial layers on low tilt angle SiC substrates. Increasing the temperature to 1200°C eliminates these hillocks but creates other morphological features due to fast substrate etching at this high temperature before growth starts.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

271-274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.271

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Online since:

October 2006

Authors:

Maher Soueidan, Gabriel Ferro, François Cauwet, L. Mollet, Christophe Jacquier, Ghassan Younes, Yves Monteil

Keywords:

Aluminum (Al), Homoepitaxy, Low-Temperature, On-Axis, VLS

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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