Paper Titles
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
p.343
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
p.347
Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
p.351
Silicon Carbide: A Playground for 1D-Modulation Electronics
p.355
Peierls Barriers and Core Properties of Partial Dislocations in SiC
p.359
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
p.363
Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
p.367
Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
p.371
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
p.375

Peierls Barriers and Core Properties of Partial Dislocations in SiC

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Abstract:

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We show that the stability of the dislocation cores and the Peierls barriers of the first kind are chargestate dependent. In intrinsic bulk the partials are stable in the neutral asymmetric reconstructions. These reconstructions have no deep states and are characterized by high Peierls barriers. In strongly doped regime the symmetric reconstructions can become more stable. These reconstructions are always electrically active with a half filled band across the band gap. In particular the symmetric reconstructions of the 30° partial have a lower Peierls barriers than the respective asymmetric ones and could be the cause of the 1.8 eV electroluminescence peak observed under carrier injection conditions.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

359-362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.359

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Online since:

October 2006

Authors:

G. Savini, M.I. Heggie, Sven Öberg

Keywords:

4H-SiC, Deep Level, Dislocation, Glide Motion, PiN Diode, REDG

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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