SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Chi Kwon Park; Gi Sub Lee; Ju Young Lee; Myung Ok Kyun; Won Jae Lee; Byoung Chul Shin; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.556-557.153

Paper Titles

Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
p.137

Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
p.141

Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
p.145

Selective Epitaxial Growth of 4H-SiC with SiO₂ Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
p.149

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
p.153

Very High Growth Rate Epitaxy Processes with Chlorine Addition
p.157

SiC Heteropolytype Structures Grown by Sublimation Epitaxy
p.161

Carbonization of Porous Silicon for 3C-SiC Growth
p.167

Carbonization Study of Different Silicon Orientations
p.171

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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Abstract:

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.