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Carbonization of Porous Silicon for 3C-SiC Growth
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Carbonization of Porous Silicon for 3C-SiC Growth

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Abstract:

In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of temperature and acetylene flow-rate on the chemical state of the surface and structure relaxation was studied. It was found that the porous nano-crystalline morphology is unstable and tends to recrystallize in temperature range typical of 3C-SiC growth on Si (10000C-13000C). The carbonization impedes recrystallization at 10000C, but at 13000C the full recrystallization takes place. Pyrolytic amorphous graphite-like carbon was found on porous silicon carbonized at temperature and with acetylene flow-rate above critical values.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

167-170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.167

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Online since:

September 2007

Authors:

A.V. Vasin, Yukari Ishikawa, Noriyoshi Shibata, Jarno Salonen, Vesa Pekka Lehto

Keywords:

3C-SiC, Carbonization, Porous Silicon (PS)

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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