Paper Titles
SiC Heteropolytype Structures Grown by Sublimation Epitaxy
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Carbonization of Porous Silicon for 3C-SiC Growth
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Carbonization Study of Different Silicon Orientations
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Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates
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Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications
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Hetero-Epitaxial Growth of 3C-SiC on Si (111) by Plasma Assisted CVD
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How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism
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Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
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Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
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Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

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Abstract:

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 ⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10-3 ⋅cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.179

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Online since:

September 2007

Authors:

Guo Sheng Sun, Jin Ning, Xing Fang Liu, Yong Mei Zhao, Jia Ye Li, Lei Wang, Wan Shun Zhao, Liang Wang

Keywords:

Doping, Polycrystalline 3C-SiC, Resonator

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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