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Temperature Stability of Heteropolytypic 6H/3C FETs
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Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
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Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure
p.851
600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
p.857
Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
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Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
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Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure

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Abstract:

Cosmic radiation has been identified as a decisive factor for power device reliability. Energetic neutrons create ionizing recoils within the semiconductor substrate which may lead to device burnout. While this failure mode has gained widespread acceptance for power devices based on silicon the question whether a similar mechanism could also lead to failure of SiC devices was left to be debated. Radiation hardness intrinsic to the SiC material was generally assumed but as experimental data was scarce reliability problems due to radiation-induced device failure could not be ruled out. Recent accelerated testing results now show that cosmic radiation will indeed affect the reliability of SiC power devices, as it is the case for its silicon counterpart, but the problem can be contained very effectively by device design.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

851-856

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.851

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Online since:

September 2007

Authors:

Gerald Soelkner, Winfried Kaindl, Michael Treu, Dethard Peters

Keywords:

Cosmic Radiation, Failure Rate, Power Device, Single Event Effects

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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