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FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD

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Abstract:

We have investigated the field limiting ring (FLR) geometry dependence of breakdown voltage characteristics for a junction barrier Schottky (JBS)-assisted FLR SiC-SBD. The SiC-SBDs having a guard ring-assisted FLR surrounding a Schottky contact edge and an internal ring inside Schottky contact were fabricated. The breakdown voltage characteristics of the JBS-assisted FLR SiC-SBD are significantly dependent on the width, spacing, and number of FLR. The breakdown voltage characteristic is improved as either the FLR width and FLR number increase or the FLR spacing decreases. Approximately 1650 V maximal breakdown voltage, corresponding to 82% ideal breakdown voltage, is observed with seven FLRs having 5 2m width and 1 2m spacing.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

869-872

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.869

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Online since:

September 2007

Authors:

S.J. Kim, S. Kim, Sang Cheol Kim, In Ho Kang, K.H. Lee, T. Matsuoka

Keywords:

Breakdown Voltage, Internal Ring, Junction Barrier Schottky (JBS) Diode, Junction Termination, SBD

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] C. Carter, J. Tsvetkov, R. Glass, D. Henshall, M. Brady, S. Muller, O. Kordina, K. Irvine, J. Edmond, H. Kong, R. Singo, S. Allen and J. Palmour: Mater. Sci. Eng. Vol. B61 (1999), p.1.

DOI: 10.1016/s0921-5107(98)00437-1

Google Scholar

[2] K. Zhu, S. Dogan, Y. T. Moon, J. Leach, F. Yun, D. Johnstone, H. Morkoc, G. Li and B. Ganguly: Appl. Phys. Lett. Vol. 86 (2005), p.261108.

Google Scholar

[3] K. Ueno and Y. Seki: Appl. Phys. Lett. Vol. 70 (1997), p.625.

Google Scholar

[4] M. Arai, H. Honda, S. Ono, H. Sawazaki and M. Ogata: Phys. Stat. Sol. (a) Vol. 86 (2003), p.1.

Google Scholar

[5] A. Itoh, T. Kimoto and H. Matsunami: IEEE Electron Device Lett. Vol. 17 (1996), p.139.

Google Scholar

[6] T. Nakamura, T. Miyanagi, T. Jikimoto and H. Tsuchida: IEEE Electron device Lett. Vol. 26 (2005), p.99.

Google Scholar

[7] J. Zhao, P. Alexandrov and X. Li: IEEE Electron Device Lett. Vol. 24 (2003), p.402.

Google Scholar

[8] R. Singh, D. Capell, A. Hefiner, J. Lai�and J. Palmour: IEEE Trans. Electron Devices Vol. 49 (2002), p. (2054).

Google Scholar

[9] A. O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt: Appl. Phys. Lett. Vol. 71 (1997), p.90.

Google Scholar

[10] K. J. Scheon, J.M. Woodall, J. A. Cooper and M. R. Melloch: IEEE Electron Devices Vol. 45 (1998), p.1595.

Google Scholar

[11] R. Singh, J. Cooper, M. Melloch, T. Chow and J. Palmour: IEEE Trans. Electron Devices Vol. 49 (2002), p.665.

DOI: 10.1109/16.992877

Google Scholar