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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

• Papers
• Abstracts

• p1 D^- Centers in High Magnetic Fields and Quantum Wells   [ 295 K ]
  Authors: J. Zhu, S.G. Louie, T. Pang
• p9 Electronic States of Thermal Donors in Semiconductors   [ 349 K ]
  Authors: C.A.J. Ammerlaan, T. Gregorkiewicz
• p17 Impurity Control in Silicon Crystals for G-Bit Scale Integration   [ 599 K ]
  Authors: Toshihiko Abe
• p29 Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells   [ 287 K ]
  Authors: Bo A.I. Monemar, P.O. Holtz, C.I. Harris, J.P. Bergman, H. Kalt, M. Sundaram, J.L. Merz, A.C. Gossard, K. Köhler, T. Schweizer
• p37 Extremely Heavy Doping of Carbon in GaAs and InGaAs   [ 290 K ]
  Authors: Makoto Konagai
• p45 Carbon and Silicon Impurity Centers in GaAs   [ 388 K ]
  Authors: R.C. Newman
• p53 Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds   [ 329 K ]
  Authors: U.M. Gösele, T.Y. Tan, M. Uematsu, K. Wada
• p61 Self-Compensation in P, As, and N Doped ZnSe   [ 220 K ]
  Authors: D.J. Chadi, N. Troullier
• p67 Vacancies in Semiconductors Characterized by Slow Positron and Their Effect on Electrical Properties   [ 379 K ]
  Authors: J.L. Lee
• p75 Effect of External Pressure and Internal Stress on Imyurity Diffusion in Silicon   [ 286 K ]
  Authors: O. Sugino, Atsushi Oshiyama