Paper Titles

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
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Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
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Photoluminescence of Germanium Doped Gallium Arsenide
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Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure
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Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs
p.237

Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates
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Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States
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Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
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Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Structure of the 0.95 eV Photoluminescence Centers...

Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

237-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.237

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Online since:

November 1995

Authors:

M.A. Reshchikov, A.A. Gutkin, V.E. Sedov

Keywords:

Complex, Jahn-Teller Effect, Photoluminescence (PL)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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