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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Charactrization of Residual Transition Metal Ions...

Charactrization of Residual Transition Metal Ions in GaN and AIN

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

55-60

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.55

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Online since:

November 1995

Authors:

J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu

Keywords:

Aluminum Nitride (AlN), Chromium, Electron Spin Resonance, Gallium Nitride (GaN), Photoluminescence (PL), Transition Metal, Vanadium

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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