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Defects in Semiconductors 19

Materials Science Forum Volumes 258 - 263

• Papers
• Abstracts

• p1 Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs   [ 585 K ]
  Authors: R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster
• p11 Optically-Induced Defects in Si-H Nanoparticles   [ 467 K ]
  Authors: Marilia J. Caldas, R.J. Baierle, E. Molinari, S. Ossicini
• p19 Defects and Doping in III-V Nitrides   [ 446 K ]
  Authors: Chris G. Van de Walle, Jörg Neugebauer
• p27 A Programme for the Future?   [ 412 K ]
  Authors: A.M. Stoneham
• p35 The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium   [ 376 K ]
  Authors: M. Budde, B. Bech Nielsen, P. Leary, J.P. Goss, R. Jones, Patrick R. Briddon, Sven Öberg, S.J. Breuer
• p41 Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium   [ 348 K ]
  Authors: B. Pajot, E. Artacho, L.I. Khirunenko, Kohei Itho, Eugene E. Haller
• p47 Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium   [ 358 K ]
  Authors: N. Aichele, U. Gommel, K. Lassmann, F. Maier, F. Zeller, Eugene E. Haller, K.M. Itoh, L.I. Khirunenko, V.I. Shakhovtsov, B. Pajot, E. Fogarassy, H.J. Müssig
• p53 DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge   [ 295 K ]
  Authors: Ch. Zistl, R. Sielemann, H. Hässlein, S. Gall, D. Bräunig, J. Bollmann
• p59 Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC   [ 294 K ]
  Authors: H. Hässlein, R. Sielemann, Ch. Zistl
• p65 Localization of Nondegenerate Electrons at Random Potential of Charged Impurities   [ 253 K ]
  Authors: M.S. Kagan, E.G. Landsberg, Natalia Zhdanova