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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Growth Rate of α-SiC by Sublimation Epitaxy

High Growth Rate of α-SiC by Sublimation Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.143

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Online since:

February 1998

Authors:

Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, Carl G. Hemmingsson, Ivan G. Ivanov, Erik Janzén

Keywords:

Epitaxy, Growth Mechanism, Growth Rate, Morpholoy, Sublimation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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