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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393The Effect of Nitrogen on Crystal Growth of SiC on...

The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

115-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.115

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Online since:

April 2002

Authors:

Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

Keywords:

(11-20) Plane, C/Si Ratio, CVD Growth, Nitrogen, Sublimation Growth, Tantalum

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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