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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393Recent Achievements and Future Challenges in SiC...

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

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Abstract:

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

165-170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.165

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Online since:

April 2002

Authors:

Tsunenobu Kimoto, S. Nakazawa, Keiko Fujihira, T. Hirao, Shun-ichi Nakamura, Yi Chen, K. Hashimoto, Hiroyuki Matsunami

Keywords:

(03-38) Plane, (11-20) Plane, Deep Level, Homoepitaxial Growth, Hot-Wall CVD, Impurity Doping

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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