Paper Titles
Crystal Interface Shape Simulation during SiC Sublimation Growth
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Growth at High Rates and Characterization of Bulk 3C-SiC Material
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Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
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SiC Epitaxy on Non-Standard Surfaces
p.125
4H-SiC Epitaxial Growth for High-Power Devices
p.131
Predictions of Nitrogen Doping in SiC Epitaxial Layers
p.137
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
p.141
Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
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Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
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4H-SiC Epitaxial Growth for High-Power Devices

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

131-136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.131

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Online since:

September 2003

Authors:

Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi

Keywords:

Epitaxial Growth, High Voltage (HV), Micropipe, Thick Layers

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi: Proc. of 2001 Inter. Symp. on Power Semic. Dev. and ICs (June 4-7, 2001, Osaka, Japan), p.27.

Google Scholar

[2] H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner and C. Hallin: Mater. Sci. Forum Vol. 389-393 (2002), p.1259.

DOI: 10.4028/www.scientific.net/msf.389-393.1259

Google Scholar

[3] O. Kordina, C. Hallin, A. Henry, J.P. Bergman, I. Ivanov, A. Ellison, N.T. Son, and E. Janzén: Phys. Stat. Sol. (b) Vol. 202 (1997), p.321.

DOI: 10.1002/1521-3951(199707)202:1<321::aid-pssb321>3.0.co;2-h

Google Scholar

[4] T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. Vol. 79 (2001), p.2761.

Google Scholar

[5] A. Ellison, J. Zhang, W. Magnusson, A. Henry, Q. Wahab, J.P. Bergman, C. Hemmingsson, N.T. Son, and E. Janzén: J. Cryst. Growth Vol. 236 (2002), p.225.

Google Scholar

[6] K. Fujihira, T. Kimoto and H. Matsunami: Mater. Sci. For. Vol. 389-393 (2002), p.175.

Google Scholar

[7] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: J. Cryst. Growth Vol. 237-239 (2002), p.1206.

Google Scholar

[8] A.A. Burk Jr., M.J. O'Loughlin, and H.D. Nordby Jr.: J. Cryst. Growth Vol. 200 (1999), p.458.

Google Scholar

[9] R. Rupp, C. Hecht, A. Wiedenhofer and D. Stephani: Mater. Res. Soc. Symp. Proc. Vol. 572 (1999), p.149.

Google Scholar

[10] J. Zhang, U. Forsberg, M. Isaxson, A. Ellison, A. Henry, O. Kordina and E. Janzén: Mater. Sci. Forum Vol. 389-393 (2002), p.1259.

Google Scholar

[11] I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi: submitted to Jpn. J. Appl. Phys.

Google Scholar

[12] R. Yakimova, M. Syväjärvi, S. Rendakova, V.A. Dimitriev, A. Henry and E. Janzén: Mater. Sci. Forum Vol. 338-342 (2000), p.237.

DOI: 10.4028/www.scientific.net/msf.338-342.237

Google Scholar

[13] H. Tsuchida, I. Kamata and K. Izumi: submitted to Jpn. J. Appl. Phys.

Google Scholar

[14] D.J. Larkin: Phys. stat. sol. (b) Vol. 202 (1997), p.305.

Google Scholar

[15] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Sci. Forum, Mater. Sci. Forum Vol. 389-393 (2002), p.171.

DOI: 10.4028/www.scientific.net/msf.389-393.171

Google Scholar

[16] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Res. Soc. Symp. Proc. Vol. 640 (2001), H2. 12. 1.

Google Scholar

[17] T. Kimoto, N. Miyamoto and H. Matsunami: IEEE Trans. on Electr. Dev. Vol. 46 (1999), p.471.

Google Scholar

[18] Q. Wahab. A. Ellison, A. Henry and E. Janzén: Appl. Phys. Lett. Vol. 76 (2000), p.2725.

Google Scholar