Paper Titles
Growth at High Rates and Characterization of Bulk 3C-SiC Material
p.115
Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
p.119
SiC Epitaxy on Non-Standard Surfaces
p.125
4H-SiC Epitaxial Growth for High-Power Devices
p.131
Predictions of Nitrogen Doping in SiC Epitaxial Layers
p.137
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
p.141
Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
p.145
Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
p.149
Nitrogen Delta Doping in 4H-SiC Epilayers
p.153

Predictions of Nitrogen Doping in SiC Epitaxial Layers

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

137-140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.137

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Online since:

September 2003

Authors:

Örjan Danielsson, Urban Forsberg, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Doping, Epitaxy, Modeling, Simulation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] C.H. Carter Jr, et al, Mat. Sci. Forum 353-356 (2001), p.3.

Google Scholar

[2] A. Ellison, et al, Mat. Sci. Forum 264-268 (1998), p.103.

Google Scholar

[3] Ö. Danielsson, U. Forsberg, A. Henry, E. Janzén, J. Cryst. Growth 235 (2002), p.352.

Google Scholar

[4] Ö. Danielsson, A. Henry, E. Janzén, J. Cryst. Growth 243 (2002), p.170.

Google Scholar

[5] U. Forsberg, Ö. Danielsson, A. Henry, M.K. Linnarsson, E. Janzén, J. Cryst. Growth 236 (2002), p.101.

Google Scholar

[6] K.J. Hughes, A.S. Tomlin, E. Hampartsoumian, W. Nimmo, I.G. Zsély, M. Ujvári, T. Turányi, A.R. Clague, M.J. Pilling, Combustion and Flame 124 (2001), p.573.

DOI: 10.1016/s0010-2180(00)00228-5

Google Scholar

[7] A.M. Dean, J.W. Bozzelli, Gas-Phase Combustion Chemistry 2nd ed, W. Gardiner ed. SpringerVerlag (1999) ISBN: 0-387-98861-0.

Google Scholar

[8] K. Yacoubi, C. Azzaro-Pantel, E. Scheid, J.P. Couderc, J. Electrochem. Soc. 146 (1999), p.3009.

Google Scholar

[9] K. Larsson, Dept. of Material Chemistry, Uppsala University, private communication.

Google Scholar

[10] J. Zhang, A. Ellison, A. Henry, M.K. Linnarsson, E. Janzén, J. Cryst. Growth 226 (2001), p.101.

Google Scholar

[11] T. Yamamoto, T. Kimoto, H. Matsunami, Mat. Sci. Forum 264-268 (1998), p.111.

Google Scholar

[12] D.J. Larkin, P.G. Neudeck, J.A. Powell, L.G. Matus, Appl. Phys. Lett. 65 (1994), p.1659.

Google Scholar

[13] T. Kimoto, A. Itoh, H. Matsunami, Appl. Phys. Lett 67 (1995), p.2385.

Google Scholar

[14] C.D. Stinespring, J.C. Wormhoudt, J. Cryst. Growth 87 (1988), p.481.

Google Scholar

[15] M.D. Allendorf, R.J. Kee, J. Electrochem. Soc. 138 (1991), p.841.

Google Scholar

[16] M.A. Kuczmarski, J. Chem. Vap. Dep. 2 (1993), p.20.

Google Scholar

[17] J.Q. Liu, H.J. Chung, T. Kuhr, Q. Li, M. Skowronski, Appl. Phys. Lett. 80 (2002), p.2111.

Google Scholar

[18] J. Zhang, U. Forsberg, M. Isacson, A. Ellison, A. Henry, O. Kordina, E. Janzén, J. Cryst. Growth 241 (2002), p.431.

DOI: 10.1016/s0022-0248(02)00921-1

Google Scholar