Paper Titles
Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
p.221
Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225
Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229
High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
p.233
SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237
Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
p.241
Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
p.247
Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
p.253
Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

237-240

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.237

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Online since:

September 2003

Authors:

L. Aversa, R. Verucchi, M. Pedio, Salvatore Iannotta

Keywords:

Epitaxy, Film Growth, Silicon, Silicon Carbide (SiC), Supersonic Beam

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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