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Non-Destructive SiC Wafer Evaluation Based on an Optical Stress Technique
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Electrical and Optical Characterization of SiC
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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
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Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
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Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
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On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
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Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

371-374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.371

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Online since:

September 2003

Authors:

Marie-Laure David, Giovanni Alfieri, Edouard V. Monakhov, Anders Hallén, Jean François Barbot, Bengt Gunnar Svensson

Keywords:

4H-SiC, DLTS, Ion Implantation, S-Center

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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