Paper Titles
Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
p.245
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
p.257
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
p.261
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
p.265
Growth of SiC Films using Tetraethylsilane
p.269
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
p.277

Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.261

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Online since:

June 2004

Authors:

Andrew J. Trunek, Philip G. Neudeck, J. Anthony Powell, David J. Spry

Keywords:

3C-SiC, Atomic Force Microscope (AFM), Chemical Vapor Deposition (CVD), Epitaxial Growth, Heteroepitaxy, Nucleation, Stacking Fault

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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