Paper Titles
Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum
p.249
Modelling of SiC-Matrix Composite Formation by Thermal Gradient Chemical Vapour Infiltration
p.253
Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
p.257
Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
p.261
Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
p.265
Growth of SiC Films using Tetraethylsilane
p.269
Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"
p.273
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
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Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
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Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

265-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.265

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Online since:

June 2004

Authors:

Thierry Chassagne, Gabriel Ferro, H. Haas, André Leycuras, Hugues Mank, Yves Monteil

Keywords:

3C-SiC Heteroepitaxy, Bending, Carbonization, SiO2 Patterning

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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DOI: 10.4028/www.scientific.net/msf.353-356.155

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DOI: 10.1016/s0040-6090(01)01597-8

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