Paper Titles
Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
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Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
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Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE
p.293
Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
p.297
Stress Control in 3C-SiC Films Grown on Si(111)
p.301
Development of a High-Throughput LPCVD Process for Depositing Low Stress Poly-SiC
p.305
Low Temperature ECR-PECVD Microcrystalline SiC Growth by Pulsed Gas Flows
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Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
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Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films
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Stress Control in 3C-SiC Films Grown on Si(111)

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

301-304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.301

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Online since:

June 2004

Authors:

Charbel Zgheib, Pierre M. Masri, Petia Weih, Oliver Ambacher, Joerg Pezoldt

Keywords:

3C-SiC, Germanium, Heteroepitaxy, Stress, μ-Raman

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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