Paper Titles
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Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC
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Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
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A New Model for the DI-Luminescence in 6H-SiC
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Observation of Vacancy Clusters in HTCVD Grown SiC
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Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC
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The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC
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A New Model for the DI-Luminescence in 6H-SiC

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Abstract:

In a combined theoretical and experimental work, we have investigated the common DI photoluminescence in 6H-SiC material. We present an atomistic model which is able to explain the annealing behavior, i. e. the correlation with the silicon vacancy, the local vibrational modes and the excitonic-like character observed.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

465-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.465

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Online since:

May 2005

Authors:

E. Rauls, Uwe Gerstmann, M.V.B. Pinheiro, Siegmund Greulich-Weber, Johann Martin Spaeth

Keywords:

Antisites, DI-Luminescence, Intrinsic Defect, Theory

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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