Paper Titles
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Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
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n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
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Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
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The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
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Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
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Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
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High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient
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4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
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The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC

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Abstract:

The mechanisms of oxygen incorporation during dry thermal oxidation of 6H-SiC wafers were investigated. Isotopic tracing of oxygen was performed by sequential oxidations in dry O2 enriched or not in the 18O isotope and subsequent determinations of the 18O profiles. The results obtained with SiC substrates were compared with those of Si, evidencing different mechanisms of oxygen incorporation and transport. The gradual nature of the SiO2/SiC interface was also evidenced. A probable explanation for this gradual SiO2/SiC interface is shown to be the formation of C clusters during oxidation.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

657-660

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.657

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Online since:

May 2005

Authors:

C. Radtke, Israel J.R. Baumvol, B.C. Ferrera, Fernanda Chiarello Stedile

Keywords:

Atomic Transport, Carbon Clusters, Isotopic Tracing, Narrow Nuclear Resonant Reaction Profiling, Oxidation Mechanism, SiO2/SiC Interface

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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