Paper Titles
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Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
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Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
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Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
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Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric
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4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric
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Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
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Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
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Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

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Abstract:

In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

705-708

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.705

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Online since:

May 2005

Authors:

Marc Avice, Ulrike Grossner, Edouard V. Monakhov, Joachim Grillenberger, Ola Nilsen, Helmer Fjellvåg, Bengt Gunnar Svensson

Keywords:

Al2O3, ALCVD, Annealing, CV, DLTS, MOS

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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