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Dislocation Generation in Device Fabrication Process
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Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon
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Electrical and Optical Properties of Dislocations Generated under Pure Conditions
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Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
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Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
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Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
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Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?
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Measurement of Nitrogen Concentration in Cz Silicon Crystals
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Gold Diffusion as a Tool for Defect Characterization in Si
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Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

465-472

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.465

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Online since:

September 2003

Authors:

Valeri I. Orlov, Yu.L. Iunin, M. Badylevich, O. Lysytskiy, Hans Richter

Keywords:

300 mm Silicon, Dislocation Mobility, Nitrogen Doping

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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