Paper Titles
Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers
p.121
The Impact of Backside Particles on the Limits of Optical Lithography
p.129
Inspection Challenges at the 45nm Technology Node
p.133
Metrology and Removal of Nanoparticles from 500 Micron Deep Trenches
p.137
Evaluation of Megasonic Cleaning for Sub-90nm Technologies
p.141
Strength Distribution of Megasonic Damage Events
p.147
Using Megasonics for Particle and Residue Removal in Single Wafer Cleaning
p.151
Behaviour of a Well-Designed Megasonic Cleaning System
p.155
Megasonics: A Cavitation Driven Process
p.159

Evaluation of Megasonic Cleaning for Sub-90nm Technologies

Article Preview

Abstract:

Cleaning of nanoparticles (< 50nm ) is becoming a major challenge in semiconductor manufacturing and the future use of traditional methods, such as megasonic cleaning, is questioned. In this paper the capability of megasonic cleaning to remove nanoparticles without inflicting damage to fragile structures is investigated. The role of dissolved gas in cleaning efficiency indicates that cavitation is the main cleaning mechanism. Consequently gas mass-balance analyses are needed to optimize the performance of cleaning tools. When gas is dissolved in the cleaning present tools can remove nanoparticles down to about 30 nm using dilute chemistries at low temperature. Ultimate performance is limited by cleaning uniformity, which depends on tool design and operation. However no tool reached the target of high particle removal efficiency andlow damage. Significantly lower damage could only be obtained by decreasing the power, at the cost of a lower cleaning efficiency for nanoparticles. The development of damage-free megasonic is discussed.

You might also be interested in these eBooks
Ultra Clean Processing of Silicon Surfaces VII View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

141-146

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.141

Citation:

Cite this paper

Online since:

April 2005

Authors:

Guy Vereecke, Frank Holsteyns, Sophia Arnauts, S. Beckx, P. Jaenen, Karine Kenis, M. Lismont, Marcel Lux, Rita Vos, James Snow, Paul W. Mertens

Keywords:

Damage, Megasonic Cleaning, Nanoparticle

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] The International Technology Roadmap for Semiconductors, http://public.itrs.net/ (2003).

Google Scholar

[2] H. Kawahara: in Ultraclean Surface Processing of Silicon Wafers (T. Hattori, ed.), Springer (1998) p.451.

Google Scholar

[3] M. Olim: J. Electrochem. Soc. 144 (1997) p.3657.

Google Scholar

[4] J. Butterbaugh: Micro 22(1) (2004) p.20.

Google Scholar

[5] A. Mayer and S. Schwartzman: J. Electronic Materials 8 (1979) p.855.

Google Scholar

[6] A.A. Busnaina and F. Dai: Semiconductor Int. (August 1997) p.85.

Google Scholar

[7] P.A. Deymier, J.O. Vasseur, A. Khelif, B. Djafari-Rouhani, l. Dobrzynski, and S. Raghavan: J. Appl. Phys. 88 (2000) p.6821.

DOI: 10.1063/1.1323521

Google Scholar

[8] S.L. Cohen, D. Rath, G. Lee, B. Furman, K.R. Pope, R. Tsai, W. Syverson, C. Gow, and M. Liehr: Mat. Res. Soc. Symp. Proc. 386 (1995) p.13.

DOI: 10.1557/proc-386-13

Google Scholar

[9] G.W. Gale and A.A. Busnaina: Particulate Sci. Technol. 17 (1999) p.229.

Google Scholar

[10] G.W. Ferrell and L.A. Crum: J. Acoust. Soc. Am. 112 (2002) p.1196.

Google Scholar

[11] S. Cohen, E.I. Cooper, K. Penner, D.L. Rath and K.K. Srivastava: United States Patent 5,800,626 (1998).

Google Scholar

[12] G. Vereecke, R. Vos, F. Holsteyns, M.O. Schmidt, M. Baeyens, S. Gomme, J. Snow, V. Coenen, P.W. Mertens, T. Bauer and M.M. Heyns: Proc. UCPSS 2002, Solid State Phenom. 92 (2003), p.143.

DOI: 10.4028/www.scientific.net/ssp.92.143

Google Scholar

[13] F. Holsteyns, G. Vereecke, V. Coenen, R. Vos, and P.W. Mertens: Proc. Forum Acusticum 2002, Sevilla, Spain, September 16-20 (2002).

Google Scholar

[14] F. Holsteyns, A. Riskin, G. Vereecke, H. Maes and P.W. Mertens: Proc. 8 th Int. Symp. Cleaning Technology in Semiconductor Device Manufacturing, Electrochemical Society Proc. Vol. PV 2003-26 (2004) p.161.

Google Scholar

[15] F. Holsteyns, K. Lee, S. Graf, R. Palmans, G. Vereecke, and P.W. Mertens: 7 th Int. Symp. on Ultra Clean Processing of Silicon Surfaces, September 20-22, 2004, Brussels, Belgium (these proceedings).

Google Scholar

[16] J. Lauerhaas, Yi Wu, Kaidong Xu, G. Vereecke, R. Vos, K. Kenis, P.W. Mertens, T. Nicolosi, and M.M. Heyns: Proc. 7th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, Electrochemical Soc. Proc. Vol. PV 2001-26 (2002) p.147.

Google Scholar

[17] M.O. Schmidt, G. Vereecke, R. Vos, F. Holsteyns, M. Baeyens, and P.W. Mertens: Proc. UCPSS 2002, Solid State Phenom. 92 (2003) p.147.

Google Scholar

[18] G. Vereecke, F. Holsteyns, J. Veltens, M. Lux, S. Arnauts, K. Kenis, R. Vos, P.W. Mertens, and M.M. Heyns: Proc. 8th Int. Symp. Cleaning Technology in Semiconductor Device Manufacturing, Electrochemical Society Proc. Vol. PV 2003-26 (2004) p.145.

DOI: 10.4028/www.scientific.net/ssp.92.27

Google Scholar

[19] A.A. Busnaina: 2nd Int. Surf. Cleaning Workshop, Boston, MA, USA, November 10-12 (2003).

Google Scholar

[20] G. Vereecke, E. Parton, F. Holsteyns, K. Xu, R. Vos, P.W. Mertens, M.O. Schmidt and T. Bauer: Micro 22(1) (2004) p.57.

Google Scholar

[21] P. Mertens and E. Parton: Solid State Technology 45 (2002) p.51.

Google Scholar

[22] F.R. Young: Cavitation (Imperial College Press, London, 1999).

Google Scholar