Growth and Characterization of Boron-Doped Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Layers Grown by Reduced Pressure Chemical Vapor Deposition

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Growth and Characterization of Boron-Doped Si_1-x-yGe_xC_y Layers Grown by Reduced Pressure Chemical Vapor Deposition

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