Paper Titles
Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit
p.1127
Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
p.1131
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
p.1135
Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures
p.1139
NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
p.1143
600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration
p.1147
Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
p.1151
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
p.1155
Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
p.1159

NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications

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Abstract:

Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized between 25°C and 500°C. Stable gate operation for more than 200h at 400°C in air is demonstrated. The excellent MOS reliability is quantified using I-V curves to dielectric breakdown and constant voltage stress to breakdown at 400°C. Although the effective tunneling barrier height B for electrons lowers to 2eV at 400°C, the extrapolated lifetime from constant voltage stress to breakdown measurements is longer than 105h at 400°C for typical logic gate operating field strength of 2MV/cm.

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Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

1143-1146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.1143

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Online since:

April 2010

Authors:

Martin Le-Huu, Frederik F. Schrey, Michael Grieb, H. Schmitt, Volker Haeublein, Anton J. Bauer, Heiner Ryssel, L. Frey

Keywords:

High Temperature Operation, Logic Gate, NMOS, Reliability, Time-Dependent Dielectric Breakdown

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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