Temperature-Dependence of the Leakage Current of 3C-SiC p+-n Diodes Caused by Extended Defects

Bernd Zippelius; M. Krieger; Heiko B. Weber; Gerhard Pensl; Hiroyuki Nagasawa; Takamitsu Kawahara; Naoki Hatta; Kuniaki Yagi; Hidetsugu Uchida; Motoki Kobayashi

doi:10.4028/www.scientific.net/MSF.645-648.343

Paper Titles

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
p.331

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
p.343

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
p.347

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
p.351

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
p.355

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
p.359

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Temperature-Dependence of the Leakage Current of...

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects

Abstract:

A large leakage current (IR) is observed at reverse bias (VR) in 3C-SiC p+-n diodes. This leakage current is caused by a high density of stacking faults (SFs). The temperature dependence of IR is studied in the temperature range from 100 K to 295 K. It turns out that IR is thermally activated for reverse voltages VR  |170| V. We propose that within this voltage range IR originates from thermally assisted tunneling of electrons and holes from band-like states of the SFs into the conduction and valence band. For VR > |170| V, the thermal barrier is strongly reduced and direct tunneling dominates. These dependences are simulated in the framework of a simplified model.