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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

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• p111 Isotopic Dependence of Near-Band-Gap Luminescence from Germanium   [ 207 K ]
  Authors: Gordon Davies, Edward C. Lightowlers, V.I. Ozhogin, K. Itoh, W.L. Hansen, Eugene E. Haller
• p117 Neutron Transmutation Doping of Isotopically Controlled Ge   [ 236 K ]
  Authors: K. Itoh, W.L. Hansen, Eugene E. Haller, J.W. Farmer, V.I. Ozhogin
• p123 Zeeman and Landau Spectroscopy of Group III Acceptors in Germanium   [ 267 K ]
  Authors: G.J. Takacs, R.E.M. Vickers, P. Fisher, C.A. Freeth
• p129 Zeeman and Piezo-Zeeman Spectroscopy of Zinc and Copper Acceptors in Germanium   [ 284 K ]
  Authors: A.D. Warner, D.S. Ryan, P. Fisher, C.A. Freeth
• p135 Hydrogen-Induced Isotope Shift of Dipole Transitions of Shallow Donors in Silicon   [ 258 K ]
  Authors: J. Hartung, Joerg Weber
• p141 The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon   [ 228 K ]
  Authors: M. Singh, Gordon Davies, Edward C. Lightowlers, G.D. Watkins
• p147 Iron-, Manganese- and Chromium-Indium Pairs in Silicon   [ 253 K ]
  Authors: U. Reislöhner, S. Schwarz, W. Witthuhn
• p153 Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition   [ 190 K ]
  Authors: Koji Gotoh, J. Murota, S. Ono
• p159 Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth   [ 247 K ]
  Authors: K. Fujita, S. Fukatsu, N. Usami, H. Yaguchi, Y. Shiraki, R. Ito
• p165 Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si   [ 295 K ]
  Authors: Y. Kamiura, T. Okashita, Y. Nishiyama, Fumio Hashimoto
• p171 Piezo-Magneto-Resistivity of Si-B in the Hopping Regime   [ 165 K ]
  Authors: M. Stöhr, P. Janiszewski, J.A. Chroboczek
• p177 Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon   [ 183 K ]
  Authors: J.D. Campion, K.G. McGuigan, M.O. Henry, Maria Helena Nazaré
• p183 Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals   [ 353 K ]
  Authors: Y. Kitagawara, K. Takamizawa, Takao Takenaka
• p189 Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method   [ 265 K ]
  Authors: E. Iino, I. Fusegawa, H. Yamagishi
• p195 The Dynamics of the Non-Radiative Triplet State of the (V-O)⁰ Defect in Silicon: Evidence for a Radical Pair Mechanism   [ 215 K ]
  Authors: A.M. Frens, M.E. Braat, A.B. van Oosten, J. Schmidt