Silicon Carbide and Related Materials 2008

Preface

Committees

Sponsor

Overview

Defect Status in SiC Manufacturing

Authors: Elif Berkman, R.T. Leonard, Michael J. Paisley, Y. Khlebnikov, Michael J. O'Loughlin, Albert A. Burk, Adrian R. Powell, D.P. Malta, E. Deyneka, M.F. Brady, I. Khlebnikov, Valeri F. Tsvetkov, H.McD. Hobgood, Joseph J. Sumakeris, C. Basceri, Vijay Balakrishna, Calvin H. Carter Jr., C. Balkas

Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method

Authors: Jung Woo Choi, Chang Hyun Son, Jong Mun Choi, Gi Sub Lee, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

Authors: Philip Hens, Ulrike Künecke, Katja Konias, Rainer Hock, Peter Wellmann

Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method

Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Authors: Katarzyna Racka, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

Authors: Peter Wellmann, Katja Konias, Philip Hens, Rainer Hock, Andreas Magerl