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Silicon Carbide and Related Materials 2008

Materials Science Forum Volumes 615 - 617

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• p49 Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC   [ 1 M ]
  Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel
• p55 Thick Epitaxial Layers Growth by Chlorine Addition   [ 292 K ]
  Authors: Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa
• p61 Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition   [ 512 K ]
  Authors: Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy Jr.
• p67 Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer   [ 7 M ]
  Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano
• p73 Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC   [ 230 K ]
  Authors: Massimo Camarda, Antonino La Magna, Francesco La Via
• p77 Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV   [ 343 K ]
  Authors: Bernd Thomas, Christian Hecht, Birgit Kallinger
• p81 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates   [ 603 K ]
  Authors: Anne Henry, Stefano Leone, Henrik Pedersen, Olof Kordina, Erik Janzén
• p85 P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates   [ 348 K ]
  Authors: Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova
• p89 Chloride-Based SiC Epitaxial Growth   [ 144 K ]
  Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, A. Lundskog, Erik Janzén
• p93 Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition   [ 648 K ]
  Authors: Stefano Leone, Henrik Pedersen, Anne Henry, Shailaja P. Rao, Olof Kordina, Erik Janzén
• p97 Low-Temperature Homoepitaxial Growth with SiCl₄ Precursor Compared to HCl Assisted SiH₄-Based Growth   [ 345 K ]
  Authors: Siva Prasad Kotamraju, Galyna Melnychuk, Yaroslav Koshka
• p101 Uniformity Improvement of Planetary Epitaxial Growth Processes through Analysis of Intentionally Stalled SiC Wafers   [ 538 K ]
  Authors: James D. Oliver, Brian H. Ponczak, Rinku P. Parikh, Raymond A. Adomaitis
• p105 Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC   [ 1 M ]
  Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy Jr., D. Kurt Gaskill
• p109 The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality   [ 2 M ]
  Authors: Ning Zhang, Yi Chen, Edward K. Sanchez, David R. Black, Michael Dudley
• p113 Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth   [ 236 K ]
  Authors: Kazutoshi Kojima, Hajime Okumura, Kazuo Arai