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Gettering and Defect Engineering in Semiconductor Technology XIII

Solid State Phenomena Volumes 156 - 158

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• p95 Growth of Heavily Phosphorus-Doped (111) Silicon Crystals   [ 570 K ]
  Authors: Feng Liu, Huan Peng Han, Yi Meng Wang, Li Ying Tong
• p101 Semi-Insulating Silicon for Microwave Devices   [ 368 K ]
  Authors: Douglas M. Jordan, Kanad Mallik, Robert J. Falster, Peter R. Wilshaw
• p107 Can Impurities be Beneficial to Photovoltaics?   [ 534 K ]
  Authors: Antonio Luque, Antonio Martí
• p115 Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors   [ 216 K ]
  Authors: Vladimir V. Voronkov, G.I. Voronkova, A.V. Batunina, V.N. Golovina, Robert J. Falster, M. Cornara, N.B. Tiurina, A.S. Guliaeva
• p123 The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures   [ 252 K ]
  Authors: A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev, Gagik A. Oganesyan, H. Ohyama
• p129 Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies   [ 276 K ]
  Authors: L.I. Murin, Bengt G. Svensson, J. Lennart Lindström, Vladimir P. Markevich, Charalamos A. Londos
• p135 Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals   [ 134 K ]
  Authors: Hiroshi Yamada Kaneta, Hajime Watanabe, Yuta Nagai, Shotaro Baba, Mitsuhiro Akatsu, Yuichi Nemoto, Terutaka Goto
• p139 Vacancies and Self-Interstitials Dynamics in Silicon Wafers   [ 387 K ]
  Authors: O. Caha, J. Kuběna, A. Kuběna, M. Meduňa
• p145 Interaction of Point Defects with Impurities in the Si-SiO₂ System and its Influence on the Properties of the Interface   [ 538 K ]
  Authors: Daniel Kropman, E. Mellikov, K. Lott, Tiit Kärner, Ivo Heinmaa, Tony Laas, Arthur Medvid, Wolfgang Skorupa, S. Prucnal, S. Zvyagin, E. Cizmar, M. Ozerov, J. Woznitsa
• p149 Anomalous Out-Diffusion Profiles of Nitrogen in Silicon   [ 191 K ]
  Authors: Vladimir V. Voronkov, Robert J. Falster, Semih Senkader
• p155 DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon   [ 241 K ]
  Authors: L.F. Makarenko, F.P. Korshunov, Stanislav B. Lastovskii, L.I. Murin, Michael Moll
• p161 Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing   [ 776 K ]
  Authors: A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich
• p167 Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms   [ 285 K ]
  Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy
• p173 Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers   [ 284 K ]
  Authors: Nicholas S. Bennett, Chihak Ahn, Nicholas E.B. Cowern, Peter Pichler
• p181 Oxygen Diffusion in Si_1-xGe_x Alloys   [ 97 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii, S.K. Golyk, Nikolay V. Abrosimov, H. Riemann