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Articles by author: Alexander G. Ulyashin

• A Comparative Analysis of Structural Defect Formation in Si⁺ Implanted and then Plasma Hydrogenated and in H⁺ Implanted Crystalline Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p309)
• Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p319)
• Charge Relaxation at Oxygen-Enriched Silicon Grain Boundaries
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p515)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)
• Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p141)
• Effect of Electron Irradiation on Thermal Donors in Oxygen-Doped High-Resistivity FZ Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p53)
• Electric Properties of Hydrogenated Polycrystalline CdS-CdSe Solid Solution Films
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p589)
• Hydrogen Gettering within Processed Oxygen-Implanted Silicon
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p35)
• Hydrogen Redistribution and Void Formation in Hydrogen Plasma Treated Czochralski Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p315)
• Influence of Fluorine on Electrical Properties and Complex Formation in GaAs
  Published in: Defects in Semiconductors 16 (p1009)
• Influence of Hydrogen Plasma Treatment on Electric Properties of Polycrystalline CdS_xSe_1-x Films
  Published in: Polycrystalline Semiconductors V (p509)
• Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p189)
• Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p91)
• P-N Junction Formation in ITO/p-Si Structure by Powerful Laser Radiation for Solar Cells Applications
  Published in: Global Research and Education (p225)
• Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p139)