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Articles by author: Bernd Thomas

• 4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions
  Published in: Silicon Carbide and Related Materials 2010 (p55)
• 6.5 kV SiC PiN Diodes with Improved Forward Characteristics
  Published in: Silicon Carbide and Related Materials 2009 (p901)
• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• An Experimental Study of High Voltage SiC PiN Diode Modules Designed for 6.5 KV / 1 KA
  Published in: Silicon Carbide and Related Materials 2010 (p531)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
  Published in: Silicon Carbide and Related Materials - 2002 (p463)
• Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p299)
• Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p89)
• Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p141)
• High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
  Published in: Silicon Carbide and Related Materials 2009 (p89)
• Influence Of Growth Conditions on Irradiation Induced Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p461)
• Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
  Published in: Silicon Carbide and Related Materials 2008 (p393)
• Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p143)
• Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
  Published in: Silicon Carbide and Related Materials 2008 (p77)
• Phase Transitions during the Deposition of Polycrystalline Iron Pyrite (FeS₂) - Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
  Published in: Polycrystalline Semiconductors IV (p301)