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Articles by author: C. Mark Johnson

• 3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
  Published in: Silicon Carbide and Related Materials 2010 (p555)
• 4.6 kV, 10.5 mOhm×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2009 (p897)
• 4H-SiC Schottky Diodes with High On/Off Current Ratio
  Published in: Silicon Carbide and Related Materials 2001 (p1145)
• A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2000 (p303)
• Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p613)
• Analysis of Novel Packaging Techniques for High Power Electronics in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p971)
• Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
  Published in: Silicon Carbide and Related Materials 2005 (p1195)
• Applications-Based Design of SiC Technology
  Published in: Silicon Carbide and Related Materials 2007 (p919)
• Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2007 (p1207)
• Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1433)
• Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p823)
• Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
  Published in: Silicon Carbide and Related Materials 2000 (p719)
• Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
  Published in: Silicon Carbide and Related Materials 2006 (p339)
• Double Implanted Power MESFET Technology in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p707)
• Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
  Published in: Silicon Carbide and Related Materials 2003 (p989)