Papers by Author: D. Krüger

Paper TitlePage

Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
Authors: P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek
473
Oxygen Ion Bombardment for Local Oxide Formation in Si
Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner
77
Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures
Authors: D. Krüger, K. Iltgen, R. Kurps
465
Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams
Authors: D. Krüger, R. Rosenkranz, B. Tippelt, M. Kuhnert, K. Grießbach, A. Lamprecht, S. Hennecke
433
SiC Buried Layer Formation Induced by Ion Implantation
Authors: N.I. Klyui, D. Krüger, B.N. Romanyuk, V.G. Litovchenko, Hans Richter
211
Gettering of Au in Heat Treated Si/SiGe/Si Structures
Authors: K. Schmalz, D. Krüger, R. Kurps, T. Morgenstern, H.P. Zeindl
171
Point Defect Concentrations, Distributions and Diffusivity in Thin Si MBE-Films: Experiments and Simulations Based on Profiling of Implanted Multiple Delta Doping Structures
Authors: D. Krüger, R. Kurps, H.P. Zeindl, U. Jagdhold
313
Showing 1 to 7 of 7 Paper Titles