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Articles by author: D. Siche

• Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p565)
• Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p39)
• Growth Induced Stacking Fault Formation in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p21)
• Growth of 3C SiC Single Crystals from Convection Dominated Melts
  Published in: Silicon Carbide and Related Materials - 1999 (p119)
• Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p29)
• Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
  Published in: Silicon Carbide and Related Materials 2001 (p67)
• Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p63)
• Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
  Published in: Silicon Carbide and Related Materials 2000 (p243)
• On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p17)
• Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials - 2002 (p91)
• Source Material Related Distribution of Defects in 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p263)
• Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
  Published in: Silicon Carbide and Related Materials - 1999 (p87)
• The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p9)