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CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: D. Siche
13 papers on 1 page:
1
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
Published in:
Silicon Carbide and Related Materials 2009
(p565)
Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
Published in:
Silicon Carbide and Related Materials 2004
(p39)
Growth Induced Stacking Fault Formation in 4H-SiC
Published in:
Silicon Carbide and Related Materials 2006
(p21)
Growth of 3C SiC Single Crystals from Convection Dominated Melts
Published in:
Silicon Carbide and Related Materials - 1999
(p119)
Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
Published in:
Silicon Carbide and Related Materials 2000
(p29)
Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
Published in:
Silicon Carbide and Related Materials 2001
(p67)
Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
Published in:
Silicon Carbide and Related Materials 2001
(p63)
Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
Published in:
Silicon Carbide and Related Materials 2000
(p243)
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p17)
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Published in:
Silicon Carbide and Related Materials - 2002
(p91)
Source Material Related Distribution of Defects in 6H-SiC Single Crystals
Published in:
Silicon Carbide and Related Materials 2000
(p263)
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Published in:
Silicon Carbide and Related Materials - 1999
(p87)
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Published in:
Silicon Carbide and Related Materials 2005
(p9)
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