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Papers by Author: Eugene B. Yakimov

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EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si

Authors: Olga V. Feklisova, Eugene B. Yakimov

567

Study of Au Diffusion in Nitrogen-Doped FZ Si

Authors: Eugene B. Yakimov

Abstract: Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth profile could be described by trap-limited diffusion. To explain the experimental profiles the existence of two traps with different capture radius should be assumed. A formation of new electrically active center is detected at a depth close to that of sharp decay in Au concentration. This center is assumed to be a result of Au capture by nitrogen-vacancy complexes and could be associated with the substitutional gold neighboring nitrogen and/or vacancy.

241

Investigations of Defects Introduced in 4H-SiC n-Type Epitaxial Layers by Hydrogen DC Plasma

Authors: Laurent Ottaviani, Eugene B. Yakimov, P. Hidalgo, Santo Martinuzzi

509

Gold Diffusion as a Tool for Defect Characterization in Si

Authors: Olga V. Feklisova, Eugene B. Yakimov

495

Electrical and Optical Properties of Dislocations Generated under Pure Conditions

Authors: Maurizio Acciarri, Simona Binetti, Olga V. Feklisova, E.A. Steinman, Eugene B. Yakimov

453

Gold Gettering by H⁺ or He⁺⁺ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers

Authors: Isabelle Périchaud, Eugene B. Yakimov, Santo Martinuzzi, Christiane Dubois